GaN Systems is introducing a range of Gallium Nitride high power switching diodes and transistors for cleantech power conversion applications. Featuring exceptionally low on-resistance, near-zero forward voltage and negligible charge storage, these devices will enable switching efficiencies well in excess of current silicon based solutions and offer dramatic benefits to switching power supply designs, inverters, hybrid and electric vehicles, battery management and power factor correction .
Based on licensed process IP developed in Canada and local foundry facilities, together with breakthrough GaN Systems device design IP, these gallium nitride devices will use low cost custom silicon base wafers.
For the first time compound semiconductor devices will be cost competitive with silicon devices, while offering greatly superior performance.
Financials
| Date | Type | Amount | Investors | Valuation |
|---|---|---|---|---|
| 11/01/11 | Series A | Unknown | CELP III Fund, Rockport Capital | Unknown |
| 06/01/12 | Series B | Unknown | Chrysalix Energy Venture Capital, Rockport Capital | Unknown |